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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 10, Pages 1327–1334
(Mi phts8034)
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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures
S. Yu. Turishcheva, V. A. Terekhova, D. A. Koyudaa, K. N. Pankova, A. V. Ershovb, D. A. Grachevb, A. I. Mashinb, È. P. Domashevskayaa a Voronezh State University
b Lobachevsky State University of Nizhny Novgorod
Abstract:
Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed.
Received: 12.02.2013 Accepted: 25.02.2013
Citation:
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, K. N. Pankov, A. V. Ershov, D. A. Grachev, A. I. Mashin, È. P. Domashevskaya, “Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1327–1334; Semiconductors, 47:10 (2013), 1316–1323
Linking options:
https://www.mathnet.ru/eng/phts8034 https://www.mathnet.ru/eng/phts/v47/i10/p1327
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