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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 10, Pages 1344–1346 (Mi phts8037)  
Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

B. A. Andreeva, N. A. Sobolevb, D. V. Denisovb, E. I. Shekb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Ioffe Institute, St. Petersburg
Full-text PDF (159 kB)
Abstract: The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500$^\circ$C are studied at 4.2 K on being annealed at 800–900$^\circ$C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.
Received: 04.03.2013
Accepted: 18.03.2013
English version:
Semiconductors, 2013, Volume 47, Issue 10, Pages 1333–1335
DOI: https://doi.org/10.1134/S1063782613100035
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. A. Andreev, N. A. Sobolev, D. V. Denisov, E. I. Shek, “Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1344–1346; Semiconductors, 47:10 (2013), 1333–1335
Citation in format AMSBIB
\Bibitem{AndSobDen13}
\by B.~A.~Andreev, N.~A.~Sobolev, D.~V.~Denisov, E.~I.~Shek
\paper Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 10
\pages 1344--1346
\mathnet{http://mi.mathnet.ru/phts8037}
\elib{https://elibrary.ru/item.asp?id=20319580}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 10
\pages 1333--1335
\crossref{https://doi.org/10.1134/S1063782613100035}
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