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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 10, Pages 1356–1360 (Mi phts8039)  
This article is cited in 10 scientific papers (total in 10 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

A. I. Khrebtovab, V. G. Talalaevcde, P. Wernere, V. V. Danilovaf, M. V. Artem'evg, B. V. Novikovcd, I. V. Shtrombd, A. S. Panfutovaa, G. È. Cirlinbdhi

a S. I. Vavilov State Optical Institute,
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Martin-Luther-Universität Halle-Wittenberg, ZIK SiLi-nano, 06120 Halle (Saale), Germany
d V. A. Fock Institute of Physics, Saint-Petersburg State University
e Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany
f Petersburg State Transport University
g Research Institute for Physical Chemical Problems of the Belarusian State University, Minsk
h Ioffe Institute, St. Petersburg
i Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Full-text PDF (1951 kB) Citations (10)
Abstract: The possibility of fabricating a composite system based on colloidal CdSe/ZnS quantum dots and GaAs nanowires is demonstrated and the structural and emission properties of this system are investigated by electron microscopy and photoluminescence spectroscopy techniques. The good wettability and developed surface of the nanowire array lead to an increase in the surface density of quantum dots and, as a consequence, in the luminosity of the system in the 600-nm wavelength region. The photoluminescence spectrum of the quantum dots exhibits good temperature stability in the entire range 10–295 K. The impact of surface states on energy relaxation and the role of exciton states in radiative recombination in the quantum dots are discussed.
Received: 20.03.2013
Accepted: 26.03.2013
English version:
Semiconductors, 2013, Volume 47, Issue 10, Pages 1346–1350
DOI: https://doi.org/10.1134/S106378261310014X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Khrebtov, V. G. Talalaev, P. Werner, V. V. Danilov, M. V. Artem'ev, B. V. Novikov, I. V. Shtrom, A. S. Panfutova, G. È. Cirlin, “Composite system based on CdSe/ZnS quantum dots and GaAs nanowires”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1356–1360; Semiconductors, 47:10 (2013), 1346–1350
Citation in format AMSBIB
\Bibitem{KhrTalWer13}
\by A.~I.~Khrebtov, V.~G.~Talalaev, P.~Werner, V.~V.~Danilov, M.~V.~Artem'ev, B.~V.~Novikov, I.~V.~Shtrom, A.~S.~Panfutova, G.~\`E.~Cirlin
\paper Composite system based on CdSe/ZnS quantum dots and GaAs nanowires
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 10
\pages 1356--1360
\mathnet{http://mi.mathnet.ru/phts8039}
\elib{https://elibrary.ru/item.asp?id=20319582}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 10
\pages 1346--1350
\crossref{https://doi.org/10.1134/S106378261310014X}
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  • https://www.mathnet.ru/eng/phts/v47/i10/p1356
    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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