Method for studying the light-induced degradation of $\alpha$-Si : H/$\mu c$-Si:H tandem photovoltaic converters under increased illuminance

An experimental installation and the procedure for its use in accelerated tests of thin-film $\alpha$-Si : H/$\mu c$-Si:H photovoltaic converters with dimensions of up to 100 $\times$ 100 mm on light-induced degradation under an increased illumination level (up to 10 kW/m$^2$) are described. Estimates of the levels of photoinduced degradation of photovoltaic converters, obtained by conventional and developed procedures, are compared and it is demonstrated that the procedure for studying the photoinduced degradation at an increased illumination level can make the test duration 100 times shorter while providing fully adequate assessment of the stability of photovoltaic converters based on amorphous and microcrystalline silicon.