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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 10, Pages 1396–1399 (Mi phts8047)  
This article is cited in 9 scientific papers (total in 9 papers)

Semiconductor physics

Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

N. V. Kryzhanovskayaabc, A. E. Zhukovabc, A. M. Nadtochiyabc, M. V. Maksimovac, È. I. Moiseevab, M. M. Kulaginac, A. V. Savel'evab, E. M. Arakcheevaac, A. A. Lipovskiiab, F. I. Zubovab, A. Kapsalisd, C. Mesaritakisd, D. Syvridisd, A. Mintairove, D. Livshitsf

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg
d University of Athens, Athens, Greece 15784
e University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA
f Innolume GmbH, 44263 Dortmund, Deutschland
Full-text PDF (1054 kB) Citations (9)
Abstract: Microring cavities (diameter $D$ = 2.7–7 $\mu$m) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter $D$ = 6 $\mu$m. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of $D$ = 2.7 $\mu$m.
Received: 14.02.2013
Accepted: 25.02.2013
English version:
Semiconductors, 2013, Volume 47, Issue 10, Pages 1387–1390
DOI: https://doi.org/10.1134/S1063782613100187
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochiy, M. V. Maksimov, È. I. Moiseev, M. M. Kulagina, A. V. Savel'ev, E. M. Arakcheeva, A. A. Lipovskii, F. I. Zubov, A. Kapsalis, C. Mesaritakis, D. Syvridis, A. Mintairov, D. Livshits, “Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region”, Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1396–1399; Semiconductors, 47:10 (2013), 1387–1390
Citation in format AMSBIB
\Bibitem{KryZhuNad13}
\by N.~V.~Kryzhanovskaya, A.~E.~Zhukov, A.~M.~Nadtochiy, M.~V.~Maksimov, \`E.~I.~Moiseev, M.~M.~Kulagina, A.~V.~Savel'ev, E.~M.~Arakcheeva, A.~A.~Lipovskii, F.~I.~Zubov, A.~Kapsalis, C.~Mesaritakis, D.~Syvridis, A.~Mintairov, D.~Livshits
\paper Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 10
\pages 1396--1399
\mathnet{http://mi.mathnet.ru/phts8047}
\elib{https://elibrary.ru/item.asp?id=20319590}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 10
\pages 1387--1390
\crossref{https://doi.org/10.1134/S1063782613100187}
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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