Tunneling effects in tilted magnetic fields in $n$-InGaAs/GaAs structures with strongly coupled double quantum wells

The effects of tunneling between two parallel two-dimensional electron gases in $n$-InGaAs/GaAs nanostructures with strongly coupled double quantum wells with a change in the in-plane component of a tilted magnetic field (up to $B_{\parallel}$ = 9.0 T) in the temperature range $T$ = 1.8–70.0 K are investigated. A nonmonotonic temperature dependence of the inverse quantum lifetime $\tau_q^{-1}(T)$ is obtained from analysis of the dependence of the longitudinal resistance on the parallel component of the tilted magnetic field at fixed temperatures, $\rho_{xx}(B_{\parallel},T)$. The quadratic portion of this dependence is found to be due to the contribution of inelastic electron-electron scattering. The decrease in the inverse quantum lifetime $\tau_q^{-1}(T)$ at $T>$ 0.1 $T_{\mathrm{F}}$ cannot be described within known theories; it seems, it is not related to the processes of electron momentum relaxation.