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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11, Pages 1486–1488
(Mi phts8064)
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This article is cited in 7 scientific papers (total in 7 papers)
Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013
Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs
V. Ya. Aleshkina, A. A. Afonenkob, N. V. Dikarevac, A. A. Dubinova, K. E. Kudryavtseva, S. V. Morozova, S. M. Nekorkinc a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Belarusian State University, Minsk
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm$^2$ at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.
Received: 22.04.2013 Accepted: 30.04.2013
Citation:
V. Ya. Aleshkin, A. A. Afonenko, N. V. Dikareva, A. A. Dubinov, K. E. Kudryavtsev, S. V. Morozov, S. M. Nekorkin, “Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1486–1488; Semiconductors, 47:11 (2013), 1475–1477
Linking options:
https://www.mathnet.ru/eng/phts8064 https://www.mathnet.ru/eng/phts/v47/i11/p1486
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