Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11, Pages 1486–1488 (Mi phts8064)  

This article is cited in 7 scientific papers (total in 7 papers)

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

V. Ya. Aleshkina, A. A. Afonenkob, N. V. Dikarevac, A. A. Dubinova, K. E. Kudryavtseva, S. V. Morozova, S. M. Nekorkinc

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Belarusian State University, Minsk
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (240 kB) Citations (7)
Abstract: The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm$^2$ at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.
Received: 22.04.2013
Accepted: 30.04.2013
English version:
Semiconductors, 2013, Volume 47, Issue 11, Pages 1475–1477
DOI: https://doi.org/10.1134/S106378261311002X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, A. A. Afonenko, N. V. Dikareva, A. A. Dubinov, K. E. Kudryavtsev, S. V. Morozov, S. M. Nekorkin, “Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1486–1488; Semiconductors, 47:11 (2013), 1475–1477
Citation in format AMSBIB
\Bibitem{AleAfoDik13}
\by V.~Ya.~Aleshkin, A.~A.~Afonenko, N.~V.~Dikareva, A.~A.~Dubinov, K.~E.~Kudryavtsev, S.~V.~Morozov, S.~M.~Nekorkin
\paper Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 11
\pages 1486--1488
\mathnet{http://mi.mathnet.ru/phts8064}
\elib{https://elibrary.ru/item.asp?id=20319607}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 11
\pages 1475--1477
\crossref{https://doi.org/10.1134/S106378261311002X}
Linking options:
  • https://www.mathnet.ru/eng/phts8064
  • https://www.mathnet.ru/eng/phts/v47/i11/p1486
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025