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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11, Pages 1489–1492
(Mi phts8065)
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This article is cited in 2 scientific papers (total in 2 papers)
Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013
Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices
M. S. Kagana, I. V. Altukhova, A. N. Baranovb, N. D. Il'inskayac, S. K. Paprotskiia, R. Teissierb, A. A. Usikovac a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow
b Institut d'Electronique du Sud, Université Montpellier 2,
34095 Montpellier Cedex 5, France
c Ioffe Institute, St. Petersburg
Abstract:
Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect).
Received: 22.04.2013 Accepted: 30.04.2013
Citation:
M. S. Kagan, I. V. Altukhov, A. N. Baranov, N. D. Il'inskaya, S. K. Paprotskii, R. Teissier, A. A. Usikova, “Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1489–1492; Semiconductors, 47:11 (2013), 1478–1480
Linking options:
https://www.mathnet.ru/eng/phts8065 https://www.mathnet.ru/eng/phts/v47/i11/p1489
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