Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11, Pages 1493–1496 (Mi phts8066)  
This article is cited in 1 scientific paper (total in 1 paper)

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

M. N. Drozdova, A. V. Novikovab, D. V. Yurasova

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (222 kB) Citations (1)
Abstract: The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.
Received: 22.04.2013
Accepted: 30.04.2013
English version:
Semiconductors, 2013, Volume 47, Issue 11, Pages 1481–1484
DOI: https://doi.org/10.1134/S1063782613110079
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. N. Drozdov, A. V. Novikov, D. V. Yurasov, “Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1493–1496; Semiconductors, 47:11 (2013), 1481–1484
Citation in format AMSBIB
\Bibitem{DroNovYur13}
\by M.~N.~Drozdov, A.~V.~Novikov, D.~V.~Yurasov
\paper Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 11
\pages 1493--1496
\mathnet{http://mi.mathnet.ru/phts8066}
\elib{https://elibrary.ru/item.asp?id=20319609}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 11
\pages 1481--1484
\crossref{https://doi.org/10.1134/S1063782613110079}
Linking options:
  • https://www.mathnet.ru/eng/phts8066
  • https://www.mathnet.ru/eng/phts/v47/i11/p1493
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025