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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11, Pages 1542–1553
(Mi phts8076)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Efficient electro-optic semiconductor medium based on type-II heterostructures
V. A. Shchukinab, N. N. Ledentsovab, L. Ya. Karachinskybcd, S. A. Blokhinbd, I. I. Novikovbcd, N. A. Bogoslovskiib, A. V. Savel'evc a VI Systems GmbH,
D-10623 Berlin, Germany
b Ioffe Institute, St. Petersburg
c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
d Connector Optics LLC, St. Petersburg
Abstract:
An electro-optic medium based on the type-II semiconductor superlattice is proposed. Electrooptic modulation of the intensity of optical reflectance of the electro-optic medium integrated into a vertical Fabry–Perot cavity is studied by the optical-reflectance-spectroscopy method. The experimental data are approximated using an oscillator model of exciton absorption. The efficiency of the electro-optic medium in the case of detuning from the absorption peak by 50 meV in electric fields of 0–50 kV/cm is 10$^{-9}$ m/V at a medium filling factor of 100%.
Received: 03.04.2013 Accepted: 08.04.2013
Citation:
V. A. Shchukin, N. N. Ledentsov, L. Ya. Karachinsky, S. A. Blokhin, I. I. Novikov, N. A. Bogoslovskii, A. V. Savel'ev, “Efficient electro-optic semiconductor medium based on type-II heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1542–1553; Semiconductors, 47:11 (2013), 1528–1538
Linking options:
https://www.mathnet.ru/eng/phts8076 https://www.mathnet.ru/eng/phts/v47/i11/p1542
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