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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11, Pages 1554–1558
(Mi phts8077)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures
A. A. Lebedev, M. V. Zamoryanskaya, S. Yu. Davydov, D. A. Kirilenko, S. P. Lebedev, L. M. Sorokin, D. B. Shustov, M. P. Scheglov Ioffe Institute, St. Petersburg
Abstract:
Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.
Received: 03.04.2013 Accepted: 16.04.2013
Citation:
A. A. Lebedev, M. V. Zamoryanskaya, S. Yu. Davydov, D. A. Kirilenko, S. P. Lebedev, L. M. Sorokin, D. B. Shustov, M. P. Scheglov, “Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1554–1558; Semiconductors, 47:11 (2013), 1539–1543
Linking options:
https://www.mathnet.ru/eng/phts8077 https://www.mathnet.ru/eng/phts/v47/i11/p1554
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