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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 12, Pages 1604–1608
(Mi phts8086)
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This article is cited in 2 scientific papers (total in 2 papers)
Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013
Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)
N. V. Kurova, V. A. Burdov Lobachevsky State University of Nizhny Novgorod
Abstract:
The results of ab initio calculations of the electronic structure of Si nanocrystals doped with shallow donors (Li, P) are reported. It is shown that phosphorus introduces much more significant distortions into the electronic structure of the nanocrystal than lithium, which is due to the stronger central cell potential of the phosphorus ion. It is found that the Li-induced splitting of the ground state in the conduction band of the nanocrystal into the singlet, doublet, and triplet retains its inverse structure typical for bulk silicon.
Received: 22.04.2013 Accepted: 30.04.2013
Citation:
N. V. Kurova, V. A. Burdov, “Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1604–1608; Semiconductors, 47:12 (2013), 1578–1582
Linking options:
https://www.mathnet.ru/eng/phts8086 https://www.mathnet.ru/eng/phts/v47/i12/p1604
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