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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 12, Pages 1613–1616
(Mi phts8088)
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This article is cited in 7 scientific papers (total in 7 papers)
Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013
Structural studies of a ferromagnetic GaMnSb layer
A. I. Bobrov, E. D. Pavlova, A. V. Kudrin, N. V. Malekhonova Lobachevsky State University of Nizhny Novgorod
Abstract:
The crystalline structure and composition of a GaMnSb film is studied. The film is produced on a GaAs (100) substrate by deposition from laser plasma in a hydrogen flux at a temperature of 400$^\circ$C. The formation of GaMn inclusions in the GaSb:Mn matrix is detected. The stoichiometry ratio of the inclusions corresponds to that of the Ga$_{162.5}$Mn$_{101.5}$ compound.
Received: 22.04.2013 Accepted: 30.04.2013
Citation:
A. I. Bobrov, E. D. Pavlova, A. V. Kudrin, N. V. Malekhonova, “Structural studies of a ferromagnetic GaMnSb layer”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1613–1616; Semiconductors, 47:12 (2013), 1587–1590
Linking options:
https://www.mathnet.ru/eng/phts8088 https://www.mathnet.ru/eng/phts/v47/i12/p1613
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