Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn $\delta$ layer

Using high-resolution transmission electron microscopy and photoelectric spectroscopy methods, the effect of Mn $\delta$ layer embedding and GaAs coating layer growth techniques in structures with In(Ga)As/GaAs quantum dots and wells on their structural and optoelectronic characteristics is studied. It is shown that the low-temperature GaAs coating layer in a structure with a Mn $\delta$ layer is structurally inhomogeneous and can cause a decrease in the quantum-dot photosensitivity.