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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 12, Pages 1621–1623 (Mi phts8090)  
This article is cited in 2 scientific papers (total in 2 papers)

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Growth model of silicon nanoislands on sapphire

N. O. Krivulin, D. A. Pavlov, P. A. Shilyaev

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (723 kB) Citations (2)
Abstract: A growth model of silicon nanoislands on silicon by molecular-beam epitaxy is refined. It is shown that silicon islands grow due to the diffusion of material from the wetting layer, with the contribution from direct hits of atoms to this growth being nearly zero.
Received: 22.04.2013
Accepted: 30.04.2013
English version:
Semiconductors, 2013, Volume 47, Issue 12, Pages 1595–1597
DOI: https://doi.org/10.1134/S1063782613120117
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. O. Krivulin, D. A. Pavlov, P. A. Shilyaev, “Growth model of silicon nanoislands on sapphire”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1621–1623; Semiconductors, 47:12 (2013), 1595–1597
Citation in format AMSBIB
\Bibitem{KriPavShi13}
\by N.~O.~Krivulin, D.~A.~Pavlov, P.~A.~Shilyaev
\paper Growth model of silicon nanoislands on sapphire
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 12
\pages 1621--1623
\mathnet{http://mi.mathnet.ru/phts8090}
\elib{https://elibrary.ru/item.asp?id=20319633}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 12
\pages 1595--1597
\crossref{https://doi.org/10.1134/S1063782613120117}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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