Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond

The differences between the quasi-elastic and inelastic approximations in calculating the carrier mobility in diamond is numerically estimated for the spatially uniform and one-dimensional cases. Data on the steady-state mobility at 20 K in the quasi-elastic and inelastic approximations differ by a factor of about 6. In the one-dimensional case for a time-constant carrier source located deep inside the sample, the data on the heavy-hole mobility in the quasi-elastic and inelastic approximations nearly coincide. When the initial distribution function is located at the sample edge, the time dependences of the carrier mobility in the quasi-elastic and inelastic approximations are markedly different. The results obtained are of importance for the interpretation of electrophysical experiments with diamond.