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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 12, Pages 1653–1661
(Mi phts8096)
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This article is cited in 21 scientific papers (total in 21 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems
S. I. Pokutnii G. V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine
Abstract:
A theory of biexcitons (formed from spatially separated electron and holes) in nanosystems that consist of zinc-selenide quantum dots synthesized in borosilicate glassy matrices is developed. The dependences of the total energy and the binding energy of the singlet ground biexciton state in such a system on the spacing between the quantum-dot surfaces and the quantum-dot radius are derived by the variational method. It is shown that biexciton formation is of the threshold character and possible in nanosystems, in which the spacing between the quantum-dot surfaces is larger than a certain critical spacing.
Received: 11.03.2013 Accepted: 19.03.2013
Citation:
S. I. Pokutnii, “Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems”, Fizika i Tekhnika Poluprovodnikov, 47:12 (2013), 1653–1661; Semiconductors, 47:12 (2013), 1626–1635
Linking options:
https://www.mathnet.ru/eng/phts8096 https://www.mathnet.ru/eng/phts/v47/i12/p1653
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