|
International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg
Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide
A. A. Bekmana, I. A. Melnichenkobc, Yu. M. Shernyakova, G. O. Kornyshova, N. Yu. Gordeeva, A. S. Payusova, O. I. Simchukb, Yu. S. Tkachb, M. V. Maksimovb a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c National Research University "Higher School of Economics", St. Petersburg Branch
Abstract:
The laser emission spectra, far-field patterns, and near-field emission intensity distributions of InGaAs/GaAs/AlGaAs edge-emitting quantum well laser diodes with ultra-broad optical waveguide were studied as functions of the pump current and temperature. It was shown that lasing in the ground state occurs in the second-order mode and in the excited state in the fundamental mode.
Received: 28.04.2025 Revised: 16.07.2025 Accepted: 23.07.2025
Citation:
A. A. Bekman, I. A. Melnichenko, Yu. M. Shernyakov, G. O. Kornyshov, N. Yu. Gordeev, A. S. Payusov, O. I. Simchuk, Yu. S. Tkach, M. V. Maksimov, “Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide”, Fizika i Tekhnika Poluprovodnikov, 59:5 (2025), 310–313
Linking options:
https://www.mathnet.ru/eng/phts8115 https://www.mathnet.ru/eng/phts/v59/i5/p310
|
| Statistics & downloads: |
| Abstract page: | 42 | | Full-text PDF : | 23 |
|