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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 1, Pages 70–76
(Mi phts8124)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Transport and partial localization of electrons in strained short-period semiconductor superlattices
L. G. Gerchikova, K. Aulenbacherb, Yu. A. Mamaeva, E. Riehnb, Yu. P. Yashina a St. Petersburg Polytechnic University
b Institute of Nuclear Physics, Mainz University, Mainz, D-55128, Germany
Abstract:
The transport of polarized electrons in photocathodes based on highly strained semiconductor superlattices is studied experimentally and theoretically. In the experiments, the electron emission from the photocathode excited by a femtosecond laser pulse is studied by time-resolved measurements. The response time and the spin relaxation time are experimentally determined. The photoresponse of the photocathodes is calculated, and the results are correlated with the experimental data. A conclusion regarding the partial localization of photoelectrons in the superlattice is drawn.
Received: 10.05.2011 Accepted: 21.06.2011
Citation:
L. G. Gerchikov, K. Aulenbacher, Yu. A. Mamaev, E. Riehn, Yu. P. Yashin, “Transport and partial localization of electrons in strained short-period semiconductor superlattices”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 70–76; Semiconductors, 46:1 (2012), 67–74
Linking options:
https://www.mathnet.ru/eng/phts8124 https://www.mathnet.ru/eng/phts/v46/i1/p70
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