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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 1, Pages 90–95
(Mi phts8126)
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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
The de Haas-van Alphen effect in nanostructures of cadmium fluoride
N. T. Bagraeva, E. S. Brilinskayab, È. Yu. Danilovskiia, L. E. Klyachkina, A. M. Malyarenkoa, V. V. Romanovb a Ioffe Institute, St. Petersburg
b St. Petersburg Polytechnic University
Abstract:
Measurements of the field and temperature dependences of static magnetic susceptibility demonstrate de Haas-van Alphen oscillations at high temperatures and low magnetic fields in sandwich nanostructures, which are represented by an ultranarrow $p$-type CdF$_2$ quantum well confined by $\delta$ barriers heavily doped with boron on the surface of an $n$-type CdF$_2$ crystal. The temperature dependences of the de Haasvan Alphen oscillation amplitudes indicate a small value of the effective mass of two-dimensional holes, as a result of which, the strong field assumption, $\mu B\gg$ 1, is fulfilled at high temperatures. It is for the first time that a periodic variation in the de Haas-van Alphen oscillation frequency is detected and is accompanied by a diamagnetic response as temperature is increased. This phenomenon manifests itself as synchronous temperature oscillations of the density and effective mass of two-dimensional holes as a result of the mesoscopic properties of $\delta$ barriers.
Received: 04.07.2011 Accepted: 11.07.2011
Citation:
N. T. Bagraev, E. S. Brilinskaya, È. Yu. Danilovskii, L. E. Klyachkin, A. M. Malyarenko, V. V. Romanov, “The de Haas-van Alphen effect in nanostructures of cadmium fluoride”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 90–95; Semiconductors, 46:1 (2012), 87–92
Linking options:
https://www.mathnet.ru/eng/phts8126 https://www.mathnet.ru/eng/phts/v46/i1/p90
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