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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 1, Pages 96–102
(Mi phts8127)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
M. M. Sobolev, I. M. Gadzhiev, I. O. Bakshaev, V. N. Nevedomskiy, M. S. Buyalo, Yu. M. Zadiranov, R. V. Zolotareva, E. L. Portnoĭ Ioffe Institute, St. Petersburg
Abstract:
The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier–Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis ($X$–$Y$) and along the growth direction $Z$ of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the $Z$ component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice.
Received: 27.06.2011 Accepted: 11.07.2011
Citation:
M. M. Sobolev, I. M. Gadzhiev, I. O. Bakshaev, V. N. Nevedomskiy, M. S. Buyalo, Yu. M. Zadiranov, R. V. Zolotareva, E. L. Portnoǐ, “Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 96–102; Semiconductors, 46:1 (2012), 93–98
Linking options:
https://www.mathnet.ru/eng/phts8127 https://www.mathnet.ru/eng/phts/v46/i1/p96
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