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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 1, Pages 96–102 (Mi phts8127)  

This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs

M. M. Sobolev, I. M. Gadzhiev, I. O. Bakshaev, V. N. Nevedomskiy, M. S. Buyalo, Yu. M. Zadiranov, R. V. Zolotareva, E. L. Portnoĭ

Ioffe Institute, St. Petersburg
Full-text PDF (646 kB) Citations (4)
Abstract: The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier–Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis ($X$$Y$) and along the growth direction $Z$ of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the $Z$ component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice.
Received: 27.06.2011
Accepted: 11.07.2011
English version:
Semiconductors, 2012, Volume 46, Issue 1, Pages 93–98
DOI: https://doi.org/10.1134/S1063782612010186
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Sobolev, I. M. Gadzhiev, I. O. Bakshaev, V. N. Nevedomskiy, M. S. Buyalo, Yu. M. Zadiranov, R. V. Zolotareva, E. L. Portnoǐ, “Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 96–102; Semiconductors, 46:1 (2012), 93–98
Citation in format AMSBIB
\Bibitem{SobGadBak12}
\by M.~M.~Sobolev, I.~M.~Gadzhiev, I.~O.~Bakshaev, V.~N.~Nevedomskiy, M.~S.~Buyalo, Yu.~M.~Zadiranov, R.~V.~Zolotareva, E.~L.~Portno{\v\i}
\paper Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 1
\pages 96--102
\mathnet{http://mi.mathnet.ru/phts8127}
\elib{https://elibrary.ru/item.asp?id=20319058}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 1
\pages 93--98
\crossref{https://doi.org/10.1134/S1063782612010186}
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  • https://www.mathnet.ru/eng/phts/v46/i1/p96
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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