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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2, Pages 158–163
(Mi phts8140)
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This article is cited in 23 scientific papers (total in 23 papers)
Spectroscopy, interaction with radiation
Effect of annealing on the luminescence of $p$-CuI crystals
A. N. Gruzintsev, V. N. Zagorodnev Institute of Microelectronics Technology and High-Purity Materials RAS
Abstract:
The photoluminescence spectra of CuI samples containing different numbers of intrinsic defects are studied at the temperature 80 K. The samples were excited with continuous-wave (cw) and pulse optical excitation. Emission peaks related to bound and free excitons, and to the recombination of electrons at shallow and deep crystal-lattice defect levels are observed. It is found that CuI crystals subjected to high-temperature annealing contain hexagonal phase inclusions.
Citation:
A. N. Gruzintsev, V. N. Zagorodnev, “Effect of annealing on the luminescence of $p$-CuI crystals”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 158–163; Semiconductors, 46:2 (2012), 149–154
Linking options:
https://www.mathnet.ru/eng/phts8140 https://www.mathnet.ru/eng/phts/v46/i2/p158
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