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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2, Pages 184–187 (Mi phts8145)  
This article is cited in 12 scientific papers (total in 12 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

G. È. Cirlinabc, M. Tchernychevad, G. Patriarchee, J.-C. Harmande

a Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
d Institut d’Electronique Fondamentale UMR 8622 CNRS, Universite Paris-Sud, 91405 Orsay Cedex, France
e LPN CNRS, 91460 Marcoussis, France
Full-text PDF (666 kB) Citations (12)
Abstract: The effect of the postgrowth annealing of InP/InAsP/InP heterostructural nanowires produced by molecular-beam epitaxy on their structural and optical properties is studied. It is shown that the procedure of short-term (1 min) annealing in an argon atmosphere provides a means for increasing the emission intensity of InAsP quantum dots, suppressing the emission from InAsP quantum wells formed as a result of lateral growth, and substantially reducing the density of structural defects in the nanowires.
Received: 04.07.2011
Accepted: 11.07.2011
English version:
Semiconductors, 2012, Volume 46, Issue 2, Pages 175–178
DOI: https://doi.org/10.1134/S1063782612020224
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. È. Cirlin, M. Tchernycheva, G. Patriarche, J.-C. Harmand, “Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 184–187; Semiconductors, 46:2 (2012), 175–178
Citation in format AMSBIB
\Bibitem{CirTchPat12}
\by G.~\`E.~Cirlin, M.~Tchernycheva, G.~Patriarche, J.-C.~Harmand
\paper Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 2
\pages 184--187
\mathnet{http://mi.mathnet.ru/phts8145}
\elib{https://elibrary.ru/item.asp?id=20319076}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 2
\pages 175--178
\crossref{https://doi.org/10.1134/S1063782612020224}
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  • https://www.mathnet.ru/eng/phts/v46/i2/p184
    • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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