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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2, Pages 188–193
(Mi phts8146)
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This article is cited in 11 scientific papers (total in 11 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Formation of (Ga,Mn)As nanowires and study of their magnetic properties
A. D. Bouravlevabc, G. È. Cirlinabd, V. V. Romanove, N. T. Bagraevae, E. S. Brilinskayae, N. A. Lebedevac, S. V. Novikovc, H. Lipsanenc, V. G. Dubrovskiiabe a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Aalto University, Aalto, FI-00076, Finland
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
e St. Petersburg Polytechnic University
Abstract:
The molecular-beam epitaxy technique is used to synthesize arrays of (Ga,Mn)As nanowire crystals on a GaAs (111)B surface in the growth-temperature range 480–680$^\circ$C. It is established that the formation of (Ga,Mn)As nanowires can be described in the context of a vapor-liquid-crystal mechanism. It is shown that the growth of (Ga,Mn)As nanowires must occur in conditions stabilized with respect to Ga. It is found that the field and temperature dependences of the static magnetic susceptibility for samples produced at the temperature 660$^\circ$C exhibit paramagnetic behavior.
Received: 04.07.2011 Accepted: 11.07.2011
Citation:
A. D. Bouravlev, G. È. Cirlin, V. V. Romanov, N. T. Bagraev, E. S. Brilinskaya, N. A. Lebedeva, S. V. Novikov, H. Lipsanen, V. G. Dubrovskii, “Formation of (Ga,Mn)As nanowires and study of their magnetic properties”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 188–193; Semiconductors, 46:2 (2012), 179–183
Linking options:
https://www.mathnet.ru/eng/phts8146 https://www.mathnet.ru/eng/phts/v46/i2/p188
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