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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2, Pages 194–197
(Mi phts8147)
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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Influence of defect formation as a result of incorporation of a Mn $\delta$ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells
A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, I. L. Kalentyeva National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
The influence of defect formation upon the deposition of a Mn $\delta$ layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.
Received: 06.07.2011 Accepted: 11.07.2011
Citation:
A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, I. L. Kalentyeva, “Influence of defect formation as a result of incorporation of a Mn $\delta$ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 194–197; Semiconductors, 46:2 (2012), 184–187
Linking options:
https://www.mathnet.ru/eng/phts8147 https://www.mathnet.ru/eng/phts/v46/i2/p194
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