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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2, Pages 235–240
(Mi phts8155)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers
A. E. Zhukovabc, A. V. Savel'evac, M. V. Maksimovab, Yu. M. Shernyakovab, E. M. Arakcheevaa, F. I. Zubova, A. A. Krasivicheva, N. V. Kryzhanovskayaab a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c St. Petersburg Polytechnic University
Abstract:
An analytical expression is derived for the linewidth enhancement factor of a quantum-dot laser, which makes it possible to describe its dependence on optical loss and photon density in an explicit form. The model accounts for refractive index variations at the ground-state optical transition due to gain/absorption variations upon the first excited-state transition in quantum dots. It is shown that a decrease in optical loss, an increase in saturated gain, and an increase in the energy separation between the excited-state and ground-state transitions results in a decrease in the $\alpha$ factor both at and above the lasing threshold.
Received: 06.07.2011 Accepted: 11.07.2011
Citation:
A. E. Zhukov, A. V. Savel'ev, M. V. Maksimov, Yu. M. Shernyakov, E. M. Arakcheeva, F. I. Zubov, A. A. Krasivichev, N. V. Kryzhanovskaya, “Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 235–240; Semiconductors, 46:2 (2012), 225–230
Linking options:
https://www.mathnet.ru/eng/phts8155 https://www.mathnet.ru/eng/phts/v46/i2/p235
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