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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2, Pages 258–261 (Mi phts8159)  
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)

S. A. Karandashova, B. A. Matveeva, I. V. Mzhelskiib, V. G. Polovinkinb, M. A. Remennyia, A. Yu. Rybalchenkoa, N. M. Stusa

a Ioffe Institute, St. Petersburg
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (358 kB) Citations (2)
Abstract: The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this non-uniformity is one of the main causes of the poor sensitivity of photodiodes which have low dynamic resistance at zero bias and which operate in the photocurrent mode.
Received: 25.07.2011
Accepted: 01.08.2011
English version:
Semiconductors, 2012, Volume 46, Issue 2, Pages 247–250
DOI: https://doi.org/10.1134/S1063782612020157
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Karandashov, B. A. Matveev, I. V. Mzhelskii, V. G. Polovinkin, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, “Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 258–261; Semiconductors, 46:2 (2012), 247–250
Citation in format AMSBIB
\Bibitem{KarMatMzh12}
\by S.~A.~Karandashov, B.~A.~Matveev, I.~V.~Mzhelskii, V.~G.~Polovinkin, M.~A.~Remennyi, A.~Yu.~Rybalchenko, N.~M.~Stus
\paper Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 2
\pages 258--261
\mathnet{http://mi.mathnet.ru/phts8159}
\elib{https://elibrary.ru/item.asp?id=20319090}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 2
\pages 247--250
\crossref{https://doi.org/10.1134/S1063782612020157}
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  • https://www.mathnet.ru/eng/phts8159
  • https://www.mathnet.ru/eng/phts/v46/i2/p258
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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