The effect of irradiation with electrons on the electrical parameters of Hg$_3$In$_2$Te$_6$

The results of studying the electrical properties of Hg$_3$In$_2$Te$_6$ crystals irradiated with electrons with the energy $E_e$ = 18 MeV and the dose $D$ = 4 $\times$ 10$^{16}$ cm$^{-2}$ are reported. It is shown that, irrespective of the charge-carrier concentration in the initial material, the Hg$_3$In$_2$Te$_6$ samples acquire the charge-carrier concentration (1.6–1.8) $\times$ 10$^{13}$ cm$^{-3}$ after irradiation. The phenomenon of Fermi level pinning in an irradiated material is discussed. The initial charge-carrier concentration, which remains virtually unchanged after irradiation and which ensures the high radiation resistance of Hg$_3$In$_2$Te$_6$ crystals, corresponds to a compensated material, similar to an intrinsic semiconductor at $T >$ 260 K.