Temperature dependence of contact resistance for Au–Ti–Pd$_2$Si–n$^+$–Si ohmic contacts subjected to microwave irradiation

Based on a theoretical analysis of the temperature dependence of the contact resistance $R_c$ for an Au–Ti–Pd$_2$Si–n$^+$–Si ohmic contact, a current-transfer mechanism explaining the experimentally observed increase in $R_c$ in the temperature range 100–380 K is proposed. It is shown that microwave treatment of such contacts results in a decrease in the spread of $R_c$ over the wafer and a decrease in the value of $R_c$ whilst retaining an increase in $R_c$ in the temperatures range 100–380 K.