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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 3, Pages 425–429 (Mi phts8189)  
This article is cited in 26 scientific papers (total in 26 papers)

Manufacturing, processing, testing of materials and structures

Pulsed laser deposition of ITO thin films and their characteristics

D. A. Zueva, A. A. Lotina, O. A. Novodvorskiia, F. V. Lebedeva, O. D. Khramovaa, I. A. Petukhovb, F. N. Putilinb, A. N. Shatokhinb, M. N. Rumyantsevab, A. M. Gaskovb

a Institute on Laser and Information Technologies, Russian Academy of Scienses, Shatura, Moskovskaya obl.
b Lomonosov Moscow State University, Faculty of Chemistry
Full-text PDF (334 kB) Citations (26)
Abstract: The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 $\times$ 10$^{-4}$ $\Omega$ cm has been achieved in the ITO films with content of Sn 5 at%.
Received: 18.10.2011
Accepted: 31.10.2011
English version:
Semiconductors, 2012, Volume 46, Issue 3, Pages 410–413
DOI: https://doi.org/10.1134/S1063782612030256
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Zuev, A. A. Lotin, O. A. Novodvorskii, F. V. Lebedev, O. D. Khramova, I. A. Petukhov, F. N. Putilin, A. N. Shatokhin, M. N. Rumyantseva, A. M. Gaskov, “Pulsed laser deposition of ITO thin films and their characteristics”, Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 425–429; Semiconductors, 46:3 (2012), 410–413
Citation in format AMSBIB
\Bibitem{ZueLotNov12}
\by D.~A.~Zuev, A.~A.~Lotin, O.~A.~Novodvorskii, F.~V.~Lebedev, O.~D.~Khramova, I.~A.~Petukhov, F.~N.~Putilin, A.~N.~Shatokhin, M.~N.~Rumyantseva, A.~M.~Gaskov
\paper Pulsed laser deposition of ITO thin films and their characteristics
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 3
\pages 425--429
\mathnet{http://mi.mathnet.ru/phts8189}
\elib{https://elibrary.ru/item.asp?id=20319120}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 3
\pages 410--413
\crossref{https://doi.org/10.1134/S1063782612030256}
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  • https://www.mathnet.ru/eng/phts/v46/i3/p425
    • This publication is cited in the following 26 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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