Effect of microwave irradiation on the resistance of Au–TiB$_x$–Ge–Au–$n$–$n^+$–$n^{++}$-GaAs(InP) ohmic contacts

Temperature dependences of the contact resistivity $\rho_c$ of Au–TiB$_x$–Ge–Au–$n$–$n^+$–$n^{++}$-GaAs(InP) ohmic contacts before and after short-term (10 s) microwave treatment have been studied both experimentally and theoretically. It is shown that $\rho_c$ can decrease after microwave treatment in the entire temperature range of $\rho_c$ measurements (100–400 K). Good agreement between the theoretical and experimental $\rho_c (T)$ curves is attained and interpreted on the assumption that the dislocation density in the semiconductor near-surface region is varied as a result of microwave radiation.