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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 5, Pages 708–713 (Mi phts8247)  
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor physics

Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C

N. D. Il'inskayaa, A. L. Zakhgeimb, S. A. Karandashova, B. A. Matveeva, V. I. Ratushnyic, M. A. Remennyia, A. Yu. Rybalchenkoc, N. M. Stusa, A. E. Chernyakovb

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c South-Russian State Polytechnic University named M. I. Platov
Full-text PDF (595 kB) Citations (4)
Abstract: The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for current crowding near the anode, using experimental data on the intensity distribution of positive and negative luminescence over the surface of the diodes. The effect of temperature on the efficiency of photogenerated carrier collection in the diodes and also the effect of the anode configuration on the current sensitivity and detectivity of the diodes are discussed.
Received: 14.11.2011
Accepted: 21.11.2011
English version:
Semiconductors, 2012, Volume 46, Issue 5, Pages 690–695
DOI: https://doi.org/10.1134/S1063782612050119
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. D. Il'inskaya, A. L. Zakhgeim, S. A. Karandashov, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, A. E. Chernyakov, “Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C”, Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 708–713; Semiconductors, 46:5 (2012), 690–695
Citation in format AMSBIB
\Bibitem{IliZakKar12}
\by N.~D.~Il'inskaya, A.~L.~Zakhgeim, S.~A.~Karandashov, B.~A.~Matveev, V.~I.~Ratushnyi, M.~A.~Remennyi, A.~Yu.~Rybalchenko, N.~M.~Stus, A.~E.~Chernyakov
\paper Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25--80$^\circ$C
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 5
\pages 708--713
\mathnet{http://mi.mathnet.ru/phts8247}
\elib{https://elibrary.ru/item.asp?id=20319169}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 5
\pages 690--695
\crossref{https://doi.org/10.1134/S1063782612050119}
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  • https://www.mathnet.ru/eng/phts/v46/i5/p708
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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