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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 6, Pages 725–727
(Mi phts8250)
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This article is cited in 8 scientific papers (total in 8 papers)
Electronic properties of semiconductors
Optical transitions in MnGa$_2$Se$_4$
B. H. Tagiev, T. G. Kerimova, O. B. Tagiyev, S. G. Asadullayeva, I. A. Mamedova Institute of Physics Azerbaijan Academy of Sciences
Abstract:
The dependence of the absorption coefficient on incident photon energy in a MnGa$_2$Se$_4$ single crystal has been investigated in the temperature range 110–295 K. Using group-theory analysis of the electron state symmetry and comparison of the symmetry of the energy spectrum of MnGa$_2$Se$_4$ and its isoelectronic analogs, a conclusion about the character of optical transitions has been drawn. It is shown that the features observed at 2.31 and 2.45 eV are related to the intracenter transitions $^6A_1^1\to^4T_2(^4G)$ and $^6A_1^2\to^4T_2(^4G)$. The $^6A_1$ state is split by the crystal field.
Received: 08.11.2011 Accepted: 21.11.2011
Citation:
B. H. Tagiev, T. G. Kerimova, O. B. Tagiyev, S. G. Asadullayeva, I. A. Mamedova, “Optical transitions in MnGa$_2$Se$_4$”, Fizika i Tekhnika Poluprovodnikov, 46:6 (2012), 725–727; Semiconductors, 46:6 (2012), 705–707
Linking options:
https://www.mathnet.ru/eng/phts8250 https://www.mathnet.ru/eng/phts/v46/i6/p725
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