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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8, Pages 993–994 (Mi phts8293)  
This article is cited in 4 scientific papers (total in 4 papers)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Solubility of sulfur in silicon

V. B. Shuman, A. A. Makhova, Yu. A. Astrov, A. M. Ivanov, A. N. Lodygin

Ioffe Institute, St. Petersburg
Full-text PDF (112 kB) Citations (4) English version article
Abstract: The available published experimental data on the maximum possible concentration of sulfur dissolved in silicon as a function of temperature are analyzed. The authors’ recent results demonstrate that the amount of sulfur dissolved in silicon crystals is approximately two times the reference values, which is in agreement with the data given by a number of other studies.
Received: 14.02.2012
Accepted: 15.02.2012
English version:
Semiconductors, 2012, Volume 46, Issue 8, Pages 969–970
DOI: https://doi.org/10.1134/S1063782612080209
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. B. Shuman, A. A. Makhova, Yu. A. Astrov, A. M. Ivanov, A. N. Lodygin, “Solubility of sulfur in silicon”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 993–994; Semiconductors, 46:8 (2012), 969–970
Citation in format AMSBIB
\Bibitem{ShuMakAst12}
\by V.~B.~Shuman, A.~A.~Makhova, Yu.~A.~Astrov, A.~M.~Ivanov, A.~N.~Lodygin
\paper Solubility of sulfur in silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 8
\pages 993--994
\mathnet{http://mi.mathnet.ru/phts8293}
\elib{https://elibrary.ru/item.asp?id=20319215}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 8
\pages 969--970
\crossref{https://doi.org/10.1134/S1063782612080209}
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  • https://www.mathnet.ru/eng/phts/v46/i8/p993
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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