Quality of the $p$-Si crystal surface and radiation-stimulated changes in the characteristics of Bi–Si–Al surface-barrier structures

The results of studying radiation-stimulated changes in the electrical characteristics of surfacebarrier structures based on $p$-Si with different values of resistivity (24 and 10 $\Omega$ cm) are reported. The state of the surface of the samples under study has been analyzed using atomic-force microscopy. It is shown that irradiation leads to the evolution of structural defects and a variation in the charge state of already existing defects in the structures based on solar-grade silicon (24 $\Omega$ cm). Pyramidal defects are formed in the surface layer of $p$-Si:B ($p$ = 24 $\Omega$ cm) and partially change their structure as a result of irradiation with X-ray quanta.