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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8, Pages 1027–1031
(Mi phts8300)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures
V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich Siberian Physical-Technical Institute of the Tomsk State University
Abstract:
The influence of oxygen plasma and thermal annealing at 900$^\circ$C on the capacitance-voltage and conductivity-voltage characteristics of $n$-GaAs-(anodic oxide)-metal structures is studied. In contrast to the unannealed structures, high-temperature annealing in Ar for 30 min leads to the emergence of a voltage dependence of the capacitance $(C)$ and conductivity $(G)$. The influence of oxygen plasma on a Ga$_2$O$_3$ film before annealing promotes additional variation in the capacitance-voltage and conductivity-voltage characteristics.
Received: 11.01.2012 Accepted: 18.01.2012
Citation:
V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich, “Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1027–1031; Semiconductors, 46:8 (2012), 1003–1007
Linking options:
https://www.mathnet.ru/eng/phts8300 https://www.mathnet.ru/eng/phts/v46/i8/p1027
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