Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8, Pages 1027–1031 (Mi phts8300)  

This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures

V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich

Siberian Physical-Technical Institute of the Tomsk State University
Full-text PDF (224 kB) Citations (4)
Abstract: The influence of oxygen plasma and thermal annealing at 900$^\circ$C on the capacitance-voltage and conductivity-voltage characteristics of $n$-GaAs-(anodic oxide)-metal structures is studied. In contrast to the unannealed structures, high-temperature annealing in Ar for 30 min leads to the emergence of a voltage dependence of the capacitance $(C)$ and conductivity $(G)$. The influence of oxygen plasma on a Ga$_2$O$_3$ film before annealing promotes additional variation in the capacitance-voltage and conductivity-voltage characteristics.
Received: 11.01.2012
Accepted: 18.01.2012
English version:
Semiconductors, 2012, Volume 46, Issue 8, Pages 1003–1007
DOI: https://doi.org/10.1134/S1063782612080088
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich, “Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1027–1031; Semiconductors, 46:8 (2012), 1003–1007
Citation in format AMSBIB
\Bibitem{KalValZar12}
\by V.~M.~Kalygina, K.~I.~Valiev, A.~N.~Zarubin, Yu.~S.~Petrova, O.~P.~Tolbanov, A.~V.~Tyazhev, T.~M.~Yaskevich
\paper Electrical characteristics of $n$-GaAs-anode film-Ga$_2$O$_3$-metal structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 8
\pages 1027--1031
\mathnet{http://mi.mathnet.ru/phts8300}
\elib{https://elibrary.ru/item.asp?id=20319222}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 8
\pages 1003--1007
\crossref{https://doi.org/10.1134/S1063782612080088}
Linking options:
  • https://www.mathnet.ru/eng/phts8300
  • https://www.mathnet.ru/eng/phts/v46/i8/p1027
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025