On the impedance spectroscopy of structures with a potential barrier

A detailed analysis of the spectral dependences of the real and imaginary components of the measured impedance of a simulated silicon $p$–$n$ junction is carried out within the framework of a conventional equivalent circuit (parallel $R_dC_b$ chain and series resistance $R_s$). A simple technique was proposed for determining the true value of the barrier capacitance of structures with a potential barrier (without surface electrically active states) on the basis of analysis of the spectral dependence for the imaginary part of the measured impedance.