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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8, Pages 1039–1042
(Mi phts8303)
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This article is cited in 18 scientific papers (total in 18 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells
V. V. Chaldysheva, E. V. Kundelevb, E. V. Nikitinac, A. Yu. Egorovc, A. A. Gorbatsevichc a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
Abstract:
The optical reflection spectra of periodic structures with two quantum wells in the unit cell are investigated. The dependences of the features of Bragg reflection and exciton-polariton reflection on the angle of incidence and polarization of light and the sample temperature are studied. Analysis of the experimental data shows that a 60-period structure acts as a distributed Bragg reflector with a peak reflectivity exceeding 90% and a spectral band width as large as 16 meV.
Received: 28.02.2012 Accepted: 07.03.2012
Citation:
V. V. Chaldyshev, E. V. Kundelev, E. V. Nikitina, A. Yu. Egorov, A. A. Gorbatsevich, “Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1039–1042; Semiconductors, 46:8 (2012), 1016–1019
Linking options:
https://www.mathnet.ru/eng/phts8303 https://www.mathnet.ru/eng/phts/v46/i8/p1039
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