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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8, Pages 1063–1066
(Mi phts8307)
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This article is cited in 11 scientific papers (total in 11 papers)
Semiconductor physics
High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
N. V. Kryzhanovskayaabc, A. E. Zhukovabc, A. M. Nadtochiyac, I. A. Slovinskiiac, M. V. Maksimovac, M. M. Kulaginac, A. V. Savel'evab, E. M. Arakcheevaa, Yu. M. Zadiranovc, S. I. Troshkovc, A. A. Lipovskiiab a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Peter the Great St. Petersburg Polytechnic University
c Ioffe Institute, St. Petersburg
Abstract:
Lasing at a wavelength of $>$ 1.3 $\mu$m has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 $\mu$m) with an active region based on InAs/InGaAs quantum dots.
Received: 26.01.2012 Accepted: 01.02.2012
Citation:
N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochiy, I. A. Slovinskii, M. V. Maksimov, M. M. Kulagina, A. V. Savel'ev, E. M. Arakcheeva, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, “High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1063–1066; Semiconductors, 46:8 (2012), 1040–1043
Linking options:
https://www.mathnet.ru/eng/phts8307 https://www.mathnet.ru/eng/phts/v46/i8/p1063
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