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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8, Pages 1082–1087
(Mi phts8310)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes
K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova Daghestan Institute of Physics after Amirkhanov
Abstract:
The dc current-voltage characteristics of microwave diodes are experimentally studied on simultaneous exposure of the diodes to a high-frequency (100 MHz) high-amplitude harmonic signal. In the current-voltage characteristics of the microwave diodes, regions of N-type negative differential resistance, hysteresis, and current oscillations are observed depending on the amplitude and frequency of the high-frequency signal. A comparative analysis of the experimentally observed effects is performed, and possible mechanisms for the effects are discussed.
Received: 13.12.2011 Accepted: 30.12.2011
Citation:
K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova, “N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1082–1087; Semiconductors, 46:8 (2012), 1059–1065
Linking options:
https://www.mathnet.ru/eng/phts8310 https://www.mathnet.ru/eng/phts/v46/i8/p1082
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