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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 8, Pages 1101–1107 (Mi phts8313)  
This article is cited in 22 scientific papers (total in 22 papers)

Manufacturing, processing, testing of materials and structures

Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on $n$-type substrates with an epitaxially deposited $p^+$-layer

A. S. Len'shina, V. M. Kashkarova, P. V. Seredina, D. A. Minakova, B. L. Agapova, M. A. Kuznetsovab, V. A. Moshnikovb, È. P. Domashevskayab

a Voronezh State University
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (1885 kB) Citations (22)
Abstract: This study is concerned with the growth features of multilayer porous silicon with layers of different porosity, obtained by electrochemical etching on an $n$-type single-crystal silicon (111) wafer with a $p^+$-layer epitaxially deposited onto the surface. The possibility of obtaining a multilayer system of ordered pores of various sizes within a single technological cycle is demonstrated. The differences in the optical characteristics of separate layers of the grown structure are shown.
Received: 31.01.2012
Accepted: 03.02.2012
English version:
Semiconductors, 2012, Volume 46, Issue 8, Pages 1079–1084
DOI: https://doi.org/10.1134/S1063782612080131
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Len'shin, V. M. Kashkarov, P. V. Seredin, D. A. Minakov, B. L. Agapov, M. A. Kuznetsova, V. A. Moshnikov, È. P. Domashevskaya, “Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on $n$-type substrates with an epitaxially deposited $p^+$-layer”, Fizika i Tekhnika Poluprovodnikov, 46:8 (2012), 1101–1107; Semiconductors, 46:8 (2012), 1079–1084
Citation in format AMSBIB
\Bibitem{LenKasSer12}
\by A.~S.~Len'shin, V.~M.~Kashkarov, P.~V.~Seredin, D.~A.~Minakov, B.~L.~Agapov, M.~A.~Kuznetsova, V.~A.~Moshnikov, \`E.~P.~Domashevskaya
\paper Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on $n$-type substrates with an epitaxially deposited $p^+$-layer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 8
\pages 1101--1107
\mathnet{http://mi.mathnet.ru/phts8313}
\elib{https://elibrary.ru/item.asp?id=20319235}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 8
\pages 1079--1084
\crossref{https://doi.org/10.1134/S1063782612080131}
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  • https://www.mathnet.ru/eng/phts/v46/i8/p1101
    • This publication is cited in the following 22 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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