Effect of various treatments on Schottky diode properties

The cause of the appearance of an excess current near the crystallization temperature of the amorphous metal PbSb alloy is studied. The effect of ultrasonic treatment on the properties of silicon solar cells based on Schottky diodes with the amorphous metal ($a$-PbSb)–$n$-Si alloy is explained. It is shown that the appearance of the excess current in Schottky diodes ($a$-PbSb)–$n$-Si upon thermal annealing is associated with structural changes in the amorphous metal film during the transition to the polycrystalline state. The effect of ultrasonic treatment on the photovoltaic properties of solar cells depends on the chosen treatment conditions.