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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 9, Pages 1146–1149
(Mi phts8321)
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This article is cited in 6 scientific papers (total in 6 papers)
Electronic properties of semiconductors
On the band gap in (In$_2$S$_3$)$_x$(CuIn$_5$S$_8$)$_{1-x}$ alloy single crystals
I. V. Bondar', V. V. Shatalova Belarussian State University of Computer Science and Radioelectronic Engineering
Abstract:
For In$_2$S$_3$, CuIn$_5$S$_8$ and (In$_2$S$_3$)$_x$(CuIn$_5$S$_8$)$_{1-x}$ alloy single crystals grown by the Bridgman method (vertical variant), the transmittance spectra in the region of the fundamental absorption-band edge are studied at 80 and 295 K. From the spectra, the band gaps of the In$_2$S$_3$ and CuIn$_5$S$_8$ compounds and the alloys based on them are determined, and the dependences of the band gap on the composition parameter $x$ of the alloys are established. It is shown that, at 80 and 295 K, the band gap nonlinearly varies with x and the variation is described by a quadratic function.
Received: 06.03.2012 Accepted: 12.03.2012
Citation:
I. V. Bondar', V. V. Shatalova, “On the band gap in (In$_2$S$_3$)$_x$(CuIn$_5$S$_8$)$_{1-x}$ alloy single crystals”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1146–1149; Semiconductors, 46:9 (2012), 1122–1125
Linking options:
https://www.mathnet.ru/eng/phts8321 https://www.mathnet.ru/eng/phts/v46/i9/p1146
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