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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 9, Pages 1244–1247 (Mi phts8337)  
This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

Transformation of a SiC/por-SiC/TiO$_2$ structure during rapid thermal annealing

R. V. Konakovaa, A. F. Kolomysa, O. S. Litvina, O. B. Okhrimenkoa, V. V. Strelchuka, L. G. Linetsb, A. V. Svetlichnyib

a Institute of Semiconductor Physics NAS, Kiev
b Taganrog Technological Institute of Southern Federal University
Full-text PDF (385 kB) Citations (4)
Abstract: The surface morphology and the Raman and photoluminescence spectra of a SiC/por-SiC/TiO$_2$ structure before and after rapid thermal annealing are studied. It is shown that rapid thermal annealing brings about the appearance of new bands in the Raman spectrum; these bands are characteristic of carbon compounds. An analysis of the spectra of photoluminescence excited by radiation with an energy lower than that of the band-gap energy in 6H-SiC has shown that the appearance of photoluminescence in porous silicon carbide is related to impurity states, which are formed at the surface due to products of chemical reactions in the course of etching.
Received: 27.02.2012
Accepted: 07.03.2012
English version:
Semiconductors, 2012, Volume 46, Issue 9, Pages 1221–1224
DOI: https://doi.org/10.1134/S1063782612090114
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Konakova, A. F. Kolomys, O. S. Litvin, O. B. Okhrimenko, V. V. Strelchuk, L. G. Linets, A. V. Svetlichnyi, “Transformation of a SiC/por-SiC/TiO$_2$ structure during rapid thermal annealing”, Fizika i Tekhnika Poluprovodnikov, 46:9 (2012), 1244–1247; Semiconductors, 46:9 (2012), 1221–1224
Citation in format AMSBIB
\Bibitem{KonKolLit12}
\by R.~V.~Konakova, A.~F.~Kolomys, O.~S.~Litvin, O.~B.~Okhrimenko, V.~V.~Strelchuk, L.~G.~Linets, A.~V.~Svetlichnyi
\paper Transformation of a SiC/por-SiC/TiO$_2$ structure during rapid thermal annealing
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 9
\pages 1244--1247
\mathnet{http://mi.mathnet.ru/phts8337}
\elib{https://elibrary.ru/item.asp?id=20319259}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 9
\pages 1221--1224
\crossref{https://doi.org/10.1134/S1063782612090114}
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  • https://www.mathnet.ru/eng/phts/v46/i9/p1244
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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