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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 10, Pages 1304–1308 (Mi phts8345)  
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

A. F. Tsatsul'nikovab, V. V. Lundinab, E. E. Zavarinab, A. E. Nikolaevab, A. V. Sakharovab, M. M. Rozhavskayaab, S. O. Usovab, P. N. Brunkova, M. A. Sinicinab, D. V. Davydovab, M. N. Mizerovb, N. A. Cherkashinc

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c Center for Material Elaboration & Structural Studies (CEMES) of the National Scientific Research (CNRS), 31055 Toulouse, France
Full-text PDF (1269 kB) Citations (5)
Abstract: The results of studies of the properties of composite InGaN/GaN/InAlN heterostructures are reported. It is shown that, in the InAlN layer, there is substantial phase separation that brings about the formation of three-dimensional islands consisting of AlN–InAlN–AlN regions. The dimensions of these islands depend on the thickness of the InAlN layer and the conditions of epitaxial growth. Interruptions in the growth of InAlN provide a means for influencing the structural properties of the InAlN islands. The use of composite InGaN/GaN/InAlN heterostructures, in which the InGaN layer with a high In content serves as the active region in light-emitting diode structures, makes it possible to achieve emission in the yellow-red wavelength range 560–620 nm.
Received: 05.03.2012
Accepted: 15.03.2012
English version:
Semiconductors, 2012, Volume 46, Issue 10, Pages 1281–1285
DOI: https://doi.org/10.1134/S1063782612100168
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov, M. M. Rozhavskaya, S. O. Usov, P. N. Brunkov, M. A. Sinicin, D. V. Davydov, M. N. Mizerov, N. A. Cherkashin, “Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1304–1308; Semiconductors, 46:10 (2012), 1281–1285
Citation in format AMSBIB
\Bibitem{TsaLunZav12}
\by A.~F.~Tsatsul'nikov, V.~V.~Lundin, E.~E.~Zavarin, A.~E.~Nikolaev, A.~V.~Sakharov, M.~M.~Rozhavskaya, S.~O.~Usov, P.~N.~Brunkov, M.~A.~Sinicin, D.~V.~Davydov, M.~N.~Mizerov, N.~A.~Cherkashin
\paper Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 10
\pages 1304--1308
\mathnet{http://mi.mathnet.ru/phts8345}
\elib{https://elibrary.ru/item.asp?id=20319267}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 10
\pages 1281--1285
\crossref{https://doi.org/10.1134/S1063782612100168}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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