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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 10, Pages 1333–1338 (Mi phts8351)  
This article is cited in 8 scientific papers (total in 8 papers)

Semiconductor physics

Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN

Huanting Chena, Arno Keppensb, Peter Hanselaerb, Yijun Luc, Yulin Gaoc, Rongrong Zhuanga, Zhong Chenc

a Department of Physics & Electronic Information Engineering, Zhangzhou Normal University, Zhangzhou, Fujian, 363000 P. R. China
b Light & Lighting Laboratory, Catholic University College Gent, Gebroeders De Smetstraat 1, B-9000 Gent, Belgium
c Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian, 361005 P. R. China
Full-text PDF (1174 kB) Citations (8)
Abstract: The electrical-thermal-optical characteristics of AlGaInP yellow and InGaN/GaN blue LEDs under electrical stresses were studied. Since the increase of effective acceptor concentration on $p$-type side, the forward voltages of AlGaInP decrease after 3155 h aging. And the operating voltage of high forward bias expansion for InGaN/GaN is due to the increase of the series resistance. Compared with InGaN/GaN, AlGaInP LEDs display different trend for the relationship between optical output and ideality factors. The relationship between ideality factor and radiative recombination is also studied and established. The characteristic of different intermediate adhesive is compared during aging period based on transient thermal test.
Received: 20.03.2012
Accepted: 25.03.2012
English version:
Semiconductors, 2012, Volume 46, Issue 10, Pages 1310–1315
DOI: https://doi.org/10.1134/S1063782612100041
Bibliographic databases:
Document Type: Article
Language: English
Citation: Huanting Chen, Arno Keppens, Peter Hanselaer, Yijun Lu, Yulin Gao, Rongrong Zhuang, Zhong Chen, “Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1333–1338; Semiconductors, 46:10 (2012), 1310–1315
Citation in format AMSBIB
\Bibitem{CheKepHan12}
\by Huanting~Chen, Arno~Keppens, Peter~Hanselaer, Yijun~Lu, Yulin~Gao, Rongrong~Zhuang, Zhong~Chen
\paper Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 10
\pages 1333--1338
\mathnet{http://mi.mathnet.ru/phts8351}
\elib{https://elibrary.ru/item.asp?id=20319273}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 10
\pages 1310--1315
\crossref{https://doi.org/10.1134/S1063782612100041}
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    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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