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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 10, Pages 1339–1343 (Mi phts8352)  
This article is cited in 7 scientific papers (total in 7 papers)

Semiconductor physics

Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes

V. V. Kabanova, E. V. Lebiadoka, G. I. Ryabtseva, A. S. Smala, M. A. Shchemeleva, D. A. Vinokurovb, S. O. Slipchenkob, Z. N. Sokolovab, I. S. Tarasovb

a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
b Ioffe Institute, St. Petersburg
Full-text PDF (292 kB) Citations (7)
Abstract: Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the quantum efficiency of luminescence is no less than 91.5% for the laser samples studied.
Received: 28.03.2012
Accepted: 02.04.2012
English version:
Semiconductors, 2012, Volume 46, Issue 10, Pages 1316–1320
DOI: https://doi.org/10.1134/S1063782612100077
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Kabanov, E. V. Lebiadok, G. I. Ryabtsev, A. S. Smal, M. A. Shchemelev, D. A. Vinokurov, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1339–1343; Semiconductors, 46:10 (2012), 1316–1320
Citation in format AMSBIB
\Bibitem{KabLebRya12}
\by V.~V.~Kabanov, E.~V.~Lebiadok, G.~I.~Ryabtsev, A.~S.~Smal, M.~A.~Shchemelev, D.~A.~Vinokurov, S.~O.~Slipchenko, Z.~N.~Sokolova, I.~S.~Tarasov
\paper Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 10
\pages 1339--1343
\mathnet{http://mi.mathnet.ru/phts8352}
\elib{https://elibrary.ru/item.asp?id=20319274}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 10
\pages 1316--1320
\crossref{https://doi.org/10.1134/S1063782612100077}
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  • https://www.mathnet.ru/eng/phts/v46/i10/p1339
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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