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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 10, Pages 1353–1356 (Mi phts8355)  
This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers

Yu. M. Shernyakova, M. V. Maksimovab, A. E. Zhukovab, A. V. Savel'evb, V. V. Korenevb, F. I. Zubovb, N. Yu. Gordeevab, D. A. Livshitsc

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Innolume GmbH, 44263 Дортмунд, Германия
Full-text PDF (293 kB) Citations (4)
Abstract: The lasing spectra and light-power characteristics of lasers based on InAs/InGaAs quantum dots with $p$-type modulation doping are studied over a broad range of pump currents. It is shown that $p$-type doping leads to a significant increase in the threshold current for the onset of lasing at the excited-state transition and makes it possible to attain higher output powers for lasing at the ground-state transition as compared to lasers with an undoped active region. An explanation for the observed features of two-level oscillation in quantum-dot lasers is suggested.
Received: 11.03.2012
Accepted: 16.03.2012
English version:
Semiconductors, 2012, Volume 46, Issue 10, Pages 1331–1334
DOI: https://doi.org/10.1134/S1063782612100132
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, A. V. Savel'ev, V. V. Korenev, F. I. Zubov, N. Yu. Gordeev, D. A. Livshits, “Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1353–1356; Semiconductors, 46:10 (2012), 1331–1334
Citation in format AMSBIB
\Bibitem{SheMakZhu12}
\by Yu.~M.~Shernyakov, M.~V.~Maksimov, A.~E.~Zhukov, A.~V.~Savel'ev, V.~V.~Korenev, F.~I.~Zubov, N.~Yu.~Gordeev, D.~A.~Livshits
\paper Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 10
\pages 1353--1356
\mathnet{http://mi.mathnet.ru/phts8355}
\elib{https://elibrary.ru/item.asp?id=20319277}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 10
\pages 1331--1334
\crossref{https://doi.org/10.1134/S1063782612100132}
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  • https://www.mathnet.ru/eng/phts/v46/i10/p1353
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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