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Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 10, Pages 1363–1367 (Mi phts8357)  
This article is cited in 5 scientific papers (total in 5 papers)

Manufacturing, processing, testing of materials and structures

Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates

I. I. Izhnina, K. J. Mynbaevb, M. V. Yakushevc, A. I. Izhnina, E. I. Fitsychd, N. L. Bazhenovb, A. V. Shilyaevb, G. V. Savitskiia, R. Jakielae, A. V. Sorochkinb, V. S. Varavinb, S. A. Dvoretskiib

a Karat Scientific and Production Enterprise, L'vov
b Ioffe Institute, St. Petersburg
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Ivan Franko National University of L'viv
e Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
Full-text PDF (259 kB) Citations (5)
Abstract: The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied. The results of photoluminescence measurements are indicative of the high structural perfection of the films, and Hall data combined with low-energy ion treatment point to a low concentration of residual donors $(\sim$5 $\times$ 10$^{14}$ cm$^{-3})$. Acceptor states supposedly related to the capture of impurities at structural defects typical of strongly lattice-mismatched heteroepitaxial structures are found in the films.
Received: 27.03.2012
Accepted: 02.04.2012
English version:
Semiconductors, 2012, Volume 46, Issue 10, Pages 1341–1345
DOI: https://doi.org/10.1134/S1063782612100065
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. I. Izhnin, K. J. Mynbaev, M. V. Yakushev, A. I. Izhnin, E. I. Fitsych, N. L. Bazhenov, A. V. Shilyaev, G. V. Savitskii, R. Jakiela, A. V. Sorochkin, V. S. Varavin, S. A. Dvoretskii, “Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1363–1367; Semiconductors, 46:10 (2012), 1341–1345
Citation in format AMSBIB
\Bibitem{IzhMynYak12}
\by I.~I.~Izhnin, K.~J.~Mynbaev, M.~V.~Yakushev, A.~I.~Izhnin, E.~I.~Fitsych, N.~L.~Bazhenov, A.~V.~Shilyaev, G.~V.~Savitskii, R.~Jakiela, A.~V.~Sorochkin, V.~S.~Varavin, S.~A.~Dvoretskii
\paper Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 10
\pages 1363--1367
\mathnet{http://mi.mathnet.ru/phts8357}
\elib{https://elibrary.ru/item.asp?id=20319279}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 10
\pages 1341--1345
\crossref{https://doi.org/10.1134/S1063782612100065}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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