Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 11, Pages 1468–1474 (Mi phts8378)  

This article is cited in 4 scientific papers (total in 4 papers)

XVI Symposium "Nanophysics and Nanoelectronics", Nizhni Novgorod, March 12-16, 2012

Investigation of the structure of the ground state of lithium donor centers in silicon enriched in $^{28}$Si isotope and the influence of internal strain in the crystal on this structure

A. A. Ezhevskiia, S. A. Popkova, A. V. Soukhorukova, D. V. Guseinova, N. V. Abrosimovb, H. Riemannb

a National Research Lobachevsky State University of Nizhny Novgorod
b Leibnitz Institute for Crystal Growth, D-12489 Berlin, Germany
Full-text PDF (423 kB) Citations (4)
Abstract: A study of silicon enriched in the $^{28}$Si isotope with a low oxygen content ($N\approx$ 2 $\times$ 10$^{14}$ cm$^{-3}$) at low temperatures ($T$ = 3.8 K) has revealed a set of electron spin resonance (ESR) spectra with anisotropic $g$ factors associated with an isolated Li donor center, whose lines are assigned to triplet and doublet states. The spectra were investigated without and with application of external load to the sample and their $g$ factors were found to be smaller than 2 ($g <$ 2.000), which distinguishes them from the previously obtained spectra. Based on theoretical and experimental estimates made within the spin-Hamiltonian analysis of the spectra, the states of donor electrons of lithium and their $g$ factors are found to depend strongly on internal strains in the crystal and intervalley spin-orbit interactions.
Received: 25.04.2012
Accepted: 25.04.2012
English version:
Semiconductors, 2012, Volume 46, Issue 11, Pages 1437–1442
DOI: https://doi.org/10.1134/S1063782612110073
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, N. V. Abrosimov, H. Riemann, “Investigation of the structure of the ground state of lithium donor centers in silicon enriched in $^{28}$Si isotope and the influence of internal strain in the crystal on this structure”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1468–1474; Semiconductors, 46:11 (2012), 1437–1442
Citation in format AMSBIB
\Bibitem{EzhPopSou12}
\by A.~A.~Ezhevskii, S.~A.~Popkov, A.~V.~Soukhorukov, D.~V.~Guseinov, N.~V.~Abrosimov, H.~Riemann
\paper Investigation of the structure of the ground state of lithium donor centers in silicon enriched in $^{28}$Si isotope and the influence of internal strain in the crystal on this structure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2012
\vol 46
\issue 11
\pages 1468--1474
\mathnet{http://mi.mathnet.ru/phts8378}
\elib{https://elibrary.ru/item.asp?id=20319301}
\transl
\jour Semiconductors
\yr 2012
\vol 46
\issue 11
\pages 1437--1442
\crossref{https://doi.org/10.1134/S1063782612110073}
Linking options:
  • https://www.mathnet.ru/eng/phts8378
  • https://www.mathnet.ru/eng/phts/v46/i11/p1468
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025